Electrical properties of vacuum-annealed titanium-doped indium oxide films
Identifieur interne : 000890 ( Chine/Analysis ); précédent : 000889; suivant : 000891Electrical properties of vacuum-annealed titanium-doped indium oxide films
Auteurs : RBID : Pascal:11-0499883Descripteurs français
- Pascal (Inist)
- Recuit, Composé minéral, Composé de métal de transition, Addition titane, Matériau dopé, Verre, Croissance film, Pulvérisation cathodique, Magnétron, Etat amorphe, Structure cristalline, Mobilité électron, Cristallinité, Spectre absorption, Couche épaisse, Résistivité couche, Bande interdite, Cellule solaire, Pulvérisation irradiation, Oxyde d'indium, 7361, 7820C, 8140E.
- Wicri :
- concept : Composé minéral, Verre.
English descriptors
- KwdEn :
- Absorption spectra, Amorphous state, Annealing, Cathode sputtering, Crystal structure, Crystallinity, Doped materials, Electron mobility, Energy gap, Film growth, Glass, Indium oxide, Inorganic compounds, Magnetrons, Sheet resistivity, Solar cells, Sputtering, Thick films, Titanium additions, Transition element compounds.
Abstract
Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited amorphous ITiO films obtained at 20 W began to crystallize at the annealing temperature of 155°C. Although there was no significant change in the crystalline structure of the films, electron mobility improved gradually with further increase in the annealing temperature. After post-annealing at 580°C, the highest electron mobility of 50 cm2 V-1 s-1 was obtained. Compared with the amorphous ITiO films, the ITiO films with a certain degree of crystallinity obtained at high deposition power were less affected by the vacuum annealing. Their electron mobility also improved due to post-annealing, but the increase was insignificant. After post-annealing, the optical transmission of the 325 nm-thick ITiO films showed approximately 80% at wavelengths ranging from 530 to 1100 nm, while the sheet resistance decreased to 10 Ω/sq. This makes them suitable for use as transparent conductive oxide layers of low bandgap solar cells.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical properties of vacuum-annealed titanium-doped indium oxide films</title><author><name sortKey="Van, L T" uniqKey="Van L">L. T. Van</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Science, Beijing Jiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Rath, J K" uniqKey="Rath J">J. K. Rath</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Faculty of Science, P.O. Box 80.000, Utrecht University</s1><s2>3508 TA Utrecht</s2><s3>NLD</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Pays-Bas</country><placeName><settlement type="city">Utrecht</settlement><region nuts="2">Utrecht (province)</region></placeName><orgName type="university">Université d'Utrecht</orgName></affiliation></author><author><name sortKey="Schropp, R E I" uniqKey="Schropp R">R. E. I. Schropp</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Faculty of Science, P.O. Box 80.000, Utrecht University</s1><s2>3508 TA Utrecht</s2><s3>NLD</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Pays-Bas</country><placeName><settlement type="city">Utrecht</settlement><region nuts="2">Utrecht (province)</region></placeName><orgName type="university">Université d'Utrecht</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0499883</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0499883 INIST</idno><idno type="RBID">Pascal:11-0499883</idno><idno type="wicri:Area/Main/Corpus">002573</idno><idno type="wicri:Area/Main/Repository">003041</idno><idno type="wicri:Area/Chine/Extraction">000890</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Amorphous state</term><term>Annealing</term><term>Cathode sputtering</term><term>Crystal structure</term><term>Crystallinity</term><term>Doped materials</term><term>Electron mobility</term><term>Energy gap</term><term>Film growth</term><term>Glass</term><term>Indium oxide</term><term>Inorganic compounds</term><term>Magnetrons</term><term>Sheet resistivity</term><term>Solar cells</term><term>Sputtering</term><term>Thick films</term><term>Titanium additions</term><term>Transition element compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term><term>Composé minéral</term><term>Composé de métal de transition</term><term>Addition titane</term><term>Matériau dopé</term><term>Verre</term><term>Croissance film</term><term>Pulvérisation cathodique</term><term>Magnétron</term><term>Etat amorphe</term><term>Structure cristalline</term><term>Mobilité électron</term><term>Cristallinité</term><term>Spectre absorption</term><term>Couche épaisse</term><term>Résistivité couche</term><term>Bande interdite</term><term>Cellule solaire</term><term>Pulvérisation irradiation</term><term>Oxyde d'indium</term><term>7361</term><term>7820C</term><term>8140E</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited amorphous ITiO films obtained at 20 W began to crystallize at the annealing temperature of 155°C. Although there was no significant change in the crystalline structure of the films, electron mobility improved gradually with further increase in the annealing temperature. After post-annealing at 580°C, the highest electron mobility of 50 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> was obtained. Compared with the amorphous ITiO films, the ITiO films with a certain degree of crystallinity obtained at high deposition power were less affected by the vacuum annealing. Their electron mobility also improved due to post-annealing, but the increase was insignificant. After post-annealing, the optical transmission of the 325 nm-thick ITiO films showed approximately 80% at wavelengths ranging from 530 to 1100 nm, while the sheet resistance decreased to 10 Ω/sq. This makes them suitable for use as transparent conductive oxide layers of low bandgap solar cells.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>257</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electrical properties of vacuum-annealed titanium-doped indium oxide films</s1></fA08><fA11 i1="01" i2="1"><s1>VAN (L. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>RATH (J. K.)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHROPP (R. E. I.)</s1></fA11><fA14 i1="01"><s1>School of Science, Beijing Jiaotong University</s1><s2>Beijing 100044</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Faculty of Science, P.O. Box 80.000, Utrecht University</s1><s2>3508 TA Utrecht</s2><s3>NLD</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>9461-9465</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000508942530390</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0499883</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited amorphous ITiO films obtained at 20 W began to crystallize at the annealing temperature of 155°C. Although there was no significant change in the crystalline structure of the films, electron mobility improved gradually with further increase in the annealing temperature. After post-annealing at 580°C, the highest electron mobility of 50 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> was obtained. Compared with the amorphous ITiO films, the ITiO films with a certain degree of crystallinity obtained at high deposition power were less affected by the vacuum annealing. Their electron mobility also improved due to post-annealing, but the increase was insignificant. After post-annealing, the optical transmission of the 325 nm-thick ITiO films showed approximately 80% at wavelengths ranging from 530 to 1100 nm, while the sheet resistance decreased to 10 Ω/sq. 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